Vishay Intertechnology, Inc.
Vishay Intertechnology, Inc.
Vishay Intertechnology, Inc. ऑटोमोटिव, औद्योगिक, कंप्यूटिंग, दूरसंचार, एयरोस्पेस, रक्षा, चिकित्सा और उपभोक्ता उत्पादों में उपयोग होने वाले असतत सेमीकंडक्टर और निष्क्रिय इलेक्ट्रॉनिक घटकों का विकास और निर्माण करती है। इसके उत्पाद पोर्टफोलियो में डायोड, MOSFET, पावर मॉड्यूल, कैपेसिटर, रेसिस्टर, इंडक्टर, ऑप्टोइलेक्ट्रॉनिक्स, सेंसर और कस्टम घटक शामिल हैं। कंपनी विश्वभर के OEM और वितरकों को घटक चयन, संदर्भ डिज़ाइन और विश्वसनीय उत्पाद विकास पर केंद्रित इंजीनियरिंग विशेषज्ञता के साथ सहयोग देती है।

SiC MOSFET Characterization Engineer - Vishay Taipei Onsite

Characterize, qualify, and release Vishay SiC power MOSFETs through high-voltage testing and production screening. This full-time onsite role is based in Taipei, Taiwan.

विवरण

  • Characterize and evaluate SiC power MOSFETs for qualification and production release
  • Plan and execute testing from engineering samples through qualification and manufacturing release
  • Conduct DC, AC, thermal, UIS/avalanche, SOA, short-circuit, Qrr, trr, and related stress testing
  • Run double-pulse and application-focused switching tests covering Eon/Eoff, timing, dv/dt, di/dt, and ringing
  • Assess device performance across temperature, bus voltage, drain current, gate-drive voltage, external gate resistance, and switching conditions
  • Investigate abnormal electrical results and relate findings to device, wafer-process, package, assembly, and test variables
  • Create good-versus-bad characterization techniques and define electrical signatures for production screening
  • Support bench-to-ATE correlation, datasheet limits, product specifications, guard bands, and production test limits
  • Document characterization results and present technical conclusions to cross-functional teams

आवश्यकताएँ

  • Bachelor’s or master’s degree in electrical engineering, electronic engineering, semiconductor engineering, physics, or a related field
  • Typically five or more years of experience in power semiconductor characterization, product engineering, device engineering, or applications engineering
  • Hands-on SiC MOSFET experience is strongly preferred
  • Experience with 650 V to 1700 V or higher power devices is highly desirable
  • Strong laboratory, problem-solving, statistical analysis, and technical communication abilities
  • Thorough knowledge of SiC MOSFET physics, switching behavior, gate-oxide behavior, capacitance, body-diode recovery, avalanche, SOA, and temperature effects
  • Practical experience testing high-voltage products with power-device analyzers such as Keysight B1505A, B1506A, or PID1500, or equivalent equipment, along with curve tracers, double-pulse systems, oscilloscopes, high-voltage probes, current probes, and LCR or impedance analyzers
  • Knowledge of high-voltage measurement practices, creepage and clearance, Kelvin connections, grounding, parasitic inductance, fixture design, and measurement correlation
  • Experience analyzing characterization data with Python, JMP, Spotfire, MATLAB, or comparable tools
  • Strong test-hardware skills, including developing and debugging test boards and associated circuitry
  • Automotive-grade SiC MOSFET development and AEC-Q101 qualification experience is preferred
  • Experience taking products from engineering characterization through qualification and high-volume manufacturing is preferred
  • Experience with wafer-level and final-test correlation, production ATE screening, and manufacturing data analysis is preferred
  • Experience with SiC reliability testing such as HTRB, HTGB, TDDB, threshold-voltage stability, and high-temperature operation is preferred

लाभ

  • A broad benefits portfolio and supporting resources for personal and professional goals
  • Distinct opportunities for career development
  • An open, collaborative working culture
  • A stable business environment
  • Opportunities to work across global and local teams

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